Low-Temperature Microwave Annealing for MOSFETs With High-k/Metal Gate Stacks

Author

Yao-Jen Lee ; Bo-An Tsai ; Chiung-Hui Lai ; Zheng-Yao Chen ; Fu-Kuo Hsueh ; Po-Jung Sung ; Current, Michael I. ; Chih-Wei Luo

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

Volume

34

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

1286

Lastpage

1288

Abstract

In this letter, low-temperature (480°C) microwave annealing (MWA) for MOS devices with high-k/metal gate-stacks is demonstrated. The capacitance-voltage (C-V) characteristics of the MOS gate-stacks, TiN/HfO₂, and TaN/HfO₂, after different annealing methods are discussed. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated using low temperature MWA. In addition, the short channel effects in nMOSFETs annealed by MWA can be also improved because of the suppression of dopant diffusion and stabilization of EOT.

Keywords

MOSFET; annealing; doping; hafnium compounds; high-k dielectric thin films; tantalum compounds; titanium compounds; EOT; MOSFET; TaN-HfO₂; TiN-HfO₂; dopant activation; dopant diffusion; equivalent oxide thickness; high-k/metal gate stacks; low-temperature microwave annealing; short channel effects; temperature 480 degC; Annealing; Electrodes; Logic gates; MOSFET; Tin; High-$k$; low temperature; metal gate; microwave annealing (MWA);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2279396

Filename

6600744