• DocumentCode
    87484
  • Title

    MSM Photodetector on a Polysilicon Membrane for a Silicon-Based Wafer-Level Packaged LED

  • Author

    Jin Kwan Kim ; Hee Chul Lee

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
  • Volume
    25
  • Issue
    24
  • fYear
    2013
  • fDate
    Dec.15, 2013
  • Firstpage
    2462
  • Lastpage
    2465
  • Abstract
    A metal-semiconductor-metal (MSM) photodetector is fabricated on a thin polysilicon membrane embedded in a silicon-based wafer-level package for light-emitting diodes (LEDs) to accurately sense the brightness of a mounted LED. A thin polysilicon membrane, which is slightly askew above the LED chip, was made reproducibly and uniformly on a silicon substrate. In the membrane, an MSM photodetector having interdigitated fingers with 3 μm width and 3 μm space was fabricated. This device can receive light directly from the LED, and thereby shows a higher and more accurate photo-response, about 280 times higher than that of a conventional structure, to the LED mounted in the silicon-based wafer package.
  • Keywords
    elemental semiconductors; light emitting diodes; optical fabrication; photodetectors; silicon; wafer level packaging; MSM photodetector; Si; a silicon-based wafer-level package; light-emitting diodes; metal-semiconductor-metal photodetector; silicon-based wafer-level packaged LED; thin polysilicon membrane; Cavity resonators; Light emitting diodes; Photodetectors; Silicon; Substrates; Temperature measurement; Wavelength measurement; MSM devices; Photodetectors; light-emitting diodes; semiconductor devices; thin film devices;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2013.2288771
  • Filename
    6658846