DocumentCode :
874912
Title :
Ultrasonic loss and gain mechanisms in semiconductors
Author :
Pomerantz, M.
Author_Institution :
IBM Watson Research Center, York town Heights, N.Y.
Volume :
53
Issue :
10
fYear :
1965
Firstpage :
1438
Lastpage :
1451
Abstract :
Several kinds of interactions of ultrasound in semiconductors are reviewed. The subjects discussed are the effects of interaction with 1) thermal phonons, which produce temperature dependent attenuation; 2) free carriers, which may give attenuation or amplification; 3) electrons bound to shallow donors, giving rise to attenuation at low temperatures; and 4) other ultrasonic waves, which may give attenuation or amplification. An introduction to relaxation effects is included.
Keywords :
Acoustic propagation; Attenuation; Capacitive sensors; Elasticity; Frequency; Phonons; Solids; Temperature; Tensile stress; Thermal conductivity;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.4258
Filename :
1446188
Link To Document :
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