Title :
Three-Dimensional FDTD Simulation of Micro-Pillar Microcavity Geometries Suitable for Efficient Single-Photon Sources
Author :
Ho, Ying-Lung Daniel ; Cao, Tun ; Ivanov, Pavel S. ; Cryan, Martin J. ; Craddock, Ian J. ; Railton, Chris J. ; Rarity, John G.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bristol Univ.
fDate :
6/1/2007 12:00:00 AM
Abstract :
We present the results of calculations of the microcavity mode structure of distributed-Bragg-reflector (DBR) micro-pillar microcavities of group III-V semiconductor materials. These structures are suitable for making single photon sources when a single quantum dot is located at the center of a wavelength scale cavity. The 3-D finite difference time domain (FDTD) method is our primary simulation tool and results are validated against semi-analytic models. We show that high light extraction efficiencies can be achieved (>90%) limited by sidewall scattering and leakage. Using radial trench DBR microcavities or 2-D photonic crystal structures, we can further suppress sidewall emission, however, light is then redirected into other leaky modes
Keywords :
III-V semiconductors; distributed Bragg reflectors; finite difference time-domain analysis; integrated optics; light scattering; light sources; micro-optics; microcavities; photonic crystals; semiconductor quantum dots; distributed-Bragg-reflector microcavities; group III-V semiconductor materials; leaky modes; light extraction efficiency; microcavity mode structure; micropillar microcavity; radial trench microcavities; sidewall emission; sidewall leakage; sidewall scattering; single quantum dot; single-photon sources; three-dimensional finite difference time domain simulation; two-dimensional photonic crystal; Distributed Bragg reflectors; Finite difference methods; Geometry; III-V semiconductor materials; Light scattering; Microcavities; Quantum dots; Semiconductor materials; Solid modeling; Time domain analysis; Bragg reflection; cavity quantum electrodynamics; light confinement; optical microcavities; photonic bandgaps; quantum dots; spontaneous emission modification;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2007.897905