Title :
Three-transistor-cell 1024-bit 500-ns MOS RAM
Author :
Regitz, William M. ; Karp, Andjoel A.
fDate :
10/1/1970 12:00:00 AM
Abstract :
See abstr. B24938, C13757 of 1970.
Keywords :
Integrated circuits; integrated circuits; Batteries; Decoding; Integrated circuit interconnections; Large scale integration; Magnetic semiconductors; Random access memory; Read-write memory; Semiconductor memory; Silicon; Solid state circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1970.1050110
