• DocumentCode
    874958
  • Title

    Three-transistor-cell 1024-bit 500-ns MOS RAM

  • Author

    Regitz, William M. ; Karp, Andjoel A.

  • Volume
    5
  • Issue
    5
  • fYear
    1970
  • fDate
    10/1/1970 12:00:00 AM
  • Firstpage
    181
  • Lastpage
    186
  • Abstract
    See abstr. B24938, C13757 of 1970.
  • Keywords
    Integrated circuits; integrated circuits; Batteries; Decoding; Integrated circuit interconnections; Large scale integration; Magnetic semiconductors; Random access memory; Read-write memory; Semiconductor memory; Silicon; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1970.1050110
  • Filename
    1050110
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=874958