DocumentCode
874988
Title
100-ns electronically variable semiconductor memory using two diodes per memory cell
Author
Waab, Sigurd ; Waggener, Herbert A.
Volume
5
Issue
5
fYear
1970
Firstpage
192
Lastpage
196
Abstract
See abstr. B24998, C13759 of 1970.
Keywords
Semiconductor storage devices; semiconductor storage devices; Capacitance; Charge carrier lifetime; Isolation technology; Metallization; P-n junctions; Schottky diodes; Semiconductor diodes; Semiconductor memory; Voltage; Writing;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1970.1050112
Filename
1050112
Link To Document