DocumentCode
875016
Title
Degradation in GaAs FETs Resulting from Alpha Particle Irradiation
Author
Anderson, W.T., Jr. ; Campbell, A.B. ; Knudson, A.R. ; Christou, A. ; Wilkins, B.R.
Volume
31
Issue
6
fYear
1984
Firstpage
1124
Lastpage
1127
Abstract
Radiation effects were measured in GaAs FETs using 1.1 MeV alpha particles. With the devices under bias, degradation in current/ voltage characteristics and charge collection efficiency was observed during irradiation. Failure analysis revealed burnout in some, but not all, devices that appeared to be initiated by local melting of the GaAs under the gate.
Keywords
Alpha particles; Apertures; Charge measurement; Chromium; Current measurement; Degradation; FETs; Gallium arsenide; Particle measurements; Radiation effects;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1984.4333468
Filename
4333468
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