DocumentCode
875107
Title
Hot-Carrier InSb microwave modulation
Author
Tan, B.T.G.
Volume
3
Issue
11
fYear
1967
fDate
11/1/1967 12:00:00 AM
Firstpage
504
Abstract
The microwave power absorbed by a rod of p type InSb in Q band waveguide decreased by up to 9 dB when electric fields of up to 126 V/cm were applied to it, probably owing to a hot-carrier effect.
Keywords
semiconductor devices; waveguide components;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19670397
Filename
4207783
Link To Document