DocumentCode :
875107
Title :
Hot-Carrier InSb microwave modulation
Author :
Tan, B.T.G.
Volume :
3
Issue :
11
fYear :
1967
fDate :
11/1/1967 12:00:00 AM
Firstpage :
504
Abstract :
The microwave power absorbed by a rod of p type InSb in Q band waveguide decreased by up to 9 dB when electric fields of up to 126 V/cm were applied to it, probably owing to a hot-carrier effect.
Keywords :
semiconductor devices; waveguide components;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19670397
Filename :
4207783
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=875107
