• DocumentCode
    875112
  • Title

    The Total Dose Dependence of the Single Event Upset Sensitivity of IDT Static RAMs

  • Author

    Campbell, A.B. ; Stapor, W.J.

  • Author_Institution
    Naval Research Laboratory Washington, D. C. 20375
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1175
  • Lastpage
    1177
  • Abstract
    The sensitivity to single event upsets induced by 40 MeV protons for three types of Integrated Device Technology, Inc. static RAMs has been shown to increase with total dose exposure.
  • Keywords
    Automatic testing; Current measurement; Degradation; MOS devices; Monitoring; Protons; Read-write memory; Single event upset; Software testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333477
  • Filename
    4333477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875112