Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers

Author

Shahidi, G.G. ; Antoniadis, Dimitri A. ; Smith, Henry I.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

9

Issue

2

fYear

1988

Firstpage

94

Lastpage

96

Abstract

Effective electron velocities in silicon MOSFETs exceeding the bulk saturation values of 10/sup 7/ cm/s at room temperature and 1.3*10/sup 7/ cm/s at liquid-nitrogen temperature are inferred. This conclusion suggests that electron velocity overshoot occurs over a large portion of the device channel length. To infer this phenomenon, submicrometer-channel-length Si MOSFETs with lightly doped inversion layers were fabricated. These devices have low field mobility of 450 cm/sup 2//V-s and showed only slight short-channel effects. Effective carrier velocities are calculated from the saturated transconductance g/sub m/ at V/sub DS/=1.5 V after correction for parasitic resistances of source and drain.<>

Keywords

high field effects; insulated gate field effect transistors; inversion layers; semiconductor device testing; 300 K; 77 K; MOSFETs; Si inversion layers; electron velocity overshoot; field mobility; parasitic resistances; saturated transconductance; short-channel effects; submicrometer-channel-length; Boron; Capacitance; Doping; Electron mobility; Fabrication; Nitrogen; Silicon; Steady-state; Temperature; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.2051

Filename

2051