Title :
Reduction of kink effect in thin-film SOI MOSFETs
Author :
Colinge, Jean-Pierre
Author_Institution :
Hewlett-Packard Labs., Palo Alto, CA, USA
Abstract :
Numerical simulation is used to show that potential and electric field distribution within thin, fully depleted SOI devices is quite different from that observed within thicker, partially depleted devices. Reduction of drain electric field and of source potential barrier brings about a dramatic decrease of kink effect.<>
Keywords :
electric potential; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; SOI MOSFET; drain electric field; electric field distribution; kink effect; numerical simulation; potential distribution; source potential barrier; Circuits; Impact ionization; MOSFETs; Oxidation; Semiconductor films; Silicon; Substrates; Thin film devices; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
