Title :
Analysis of Damage in MOS Devices for Several Radiation Environments
Author_Institution :
US Army Eradcom Harry Diamond Laboratories Adelphi, MD 20783
Abstract :
Recent results on hardened and unhardened CMOS inverters are analyzed. New experimental results indicate that lateral hole transport promotes a large interface state buildup in n-channel devices irradiated with the gate grounded. Other prompt results can be explained by recombination models. Annealing results in hardened oxides can be predicted using linear systems theory.
Keywords :
Annealing; Charge carrier processes; Electrons; Interface states; Inverters; MOS capacitors; MOS devices; Protons; Radiation hardening; Spontaneous emission;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333489
