• DocumentCode
    875287
  • Title

    Measurement of Radiation-Induced Interface Traps Using MOSFETs

  • Author

    Gaitan, M. ; Russell, T.J.

  • Author_Institution
    Semiconductor Devices and Circuits Division National Bureau of Standards Washington, DC 20234
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1256
  • Lastpage
    1260
  • Abstract
    The buildup of SiO2-Si interface traps due to radiation was measured by a charge pumping measurement method and by a technique based on the slope of the transistor ln(Id)-Vg characteristics in weak inversion. Both aueasurements make use of MOS transistors. The important differences in the "trap density" obtained from the two measurement methods are discussed. The results of the measurements are interpreted to assess the effect of gamma irradiation on the distribution of interface trap density.
  • Keywords
    Area measurement; Charge measurement; Charge pumps; Circuits; Current measurement; Density measurement; MOSFETs; NIST; Pulse measurements; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333492
  • Filename
    4333492
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875287