Title :
The Ceneration of Field Sensitive Interface States in Commercial CMOS Devices
Author :
Crowley, John L. ; Dries, Lawrence J.
Author_Institution :
Lockheed Palo Alto Research Laboratory Palo Alto, California 94304
Keywords :
CMOS process; Capacitance-voltage characteristics; Energy measurement; Frequency measurement; Interface states; MOS capacitors; Manufacturing processes; Phase change materials; Stress measurement; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333494
