• DocumentCode
    875322
  • Title

    Charge and Interface State Generation in Field Oxides

  • Author

    Boesch, H. Edwin, Jr. ; Taylor, Thomas L.

  • Author_Institution
    US Army Electronics Research and Development Command Harry Diamond Laboratories Adelphi, Maryland 20783
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1273
  • Lastpage
    1279
  • Abstract
    Radiation-induced charge and interface state generation are measured in MOS capacitors with steam oxide layers typical of standard field oxides and at low fields (<0.1 MV/cm) typical of device applications. Interface state buildup occurs primarily through a "prompt" process and most of the states are "slow". Free electron-hole pair yield at low fields is reduced from that previously measured in thinner (gate) oxides.
  • Keywords
    Charge measurement; Current measurement; Interface states; Linear particle accelerator; MOS capacitors; Performance evaluation; Pulse measurements; Research and development; Thickness measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333495
  • Filename
    4333495
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875322