Abstract :
In future microelectronic devices, active regions may drop below 1 ¿m2 in area. This paper proposes a mechanism whereby a single energetic ion may permanently alter the performance of, or even destroy, such a small device. Experimental confirmation of this mechanism has been obtained with a scanning electron microprobe, operating in the electron-beam-induced conductivity mode, which showed the damage resulting from individual phosphorus ions that had been implanted in silicon. Carrier capture cross sections from this damage were observed, ranging from 0.5 to 0.8 ¿m2.
