Title :
Method for determination of carrier capture cross-sections at Si/SiO2 interface
Author :
Wang, L. ; Neugroschel, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
A simple DC method for measurement of the capture cross-sections at the Si/SiO2 interface is presented. The method combines the measurement of the interface recombination current under the gate of the MOS transistor with the measurement of the subthreshold slope. The results are in good agreement with previous results obtained by AC small-signal and transient methods.
Keywords :
carrier mobility; elemental semiconductors; interface states; semiconductor-insulator boundaries; silicon; silicon compounds; AC small-signal methods; AC transient methods; DC method; Si-SiO2; Si/SiO2 interface; carrier capture cross-sections; interface recombination current; subthreshold slope;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040092
