DocumentCode
875368
Title
Pt-Ir silicide Schottky-barrier IR detectors
Author
Tsaur, Bor-Yeu ; Weeks, Melanie M. ; Pellegrini, Paul W.
Author_Institution
MIT Lincoln Lab., Lexington, MA, USA
Volume
9
Issue
2
fYear
1988
Firstpage
100
Lastpage
102
Abstract
Schottky-barrier infrared detectors have been fabricated with silicide electrodes formed by sequential vacuum deposition of 5-10-AA-thick Pt and 10-20-AA-thick Ir layers on p-type Si substrates and subsequent thermal annealing. The barrier heights of the Pt-Ir Schottky diodes are 0.16-0.9 eV, compared with 0.22 eV for Pt-only diodes, and the detector cutoff wavelengths extend well beyond 6 mu m. Furthermore, the Pt-Ir diodes exhibit higher detector quantum efficiency than either Pt-only or Ir-only diodes over a significant spectral range.<>
Keywords
Schottky-barrier diodes; indium compounds; infrared detectors; photodiodes; platinum compounds; 0.16 to 0.19 eV; 1.5 to 9 micron; PtSi/sub x/-IrSi/sub x/-Si; Schottky diodes; Schottky-barrier IR detectors; Si substrates; barrier heights; detector cutoff wavelengths; quantum efficiency; silicide electrodes; thermal annealing; Annealing; Electrodes; Infrared detectors; Laboratories; Palladium; Schottky diodes; Semiconductor films; Silicides; Substrates; Surface contamination;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.2055
Filename
2055
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