• DocumentCode
    875423
  • Title

    Total Dose and Dose Rate Radiation Characterization of EPI-CMOS Radiation Hardened Memory and Microprocessor Devices

  • Author

    Gingerich, B.L. ; Hermsen, J.M. ; Lee, J.C. ; Schroeder, J.E.

  • Author_Institution
    Harris Semiconductor P. O. Box 883 Melbourne, FL 32901
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1332
  • Lastpage
    1336
  • Abstract
    The process, circuit discription, and total dose radiation characteristics are presented for two second generation hardened 4K EPI-CMOS RAMs and a first generation 80C85 microprocessor. Total dose radiation performance is presented to 10M rad-Si and effects of biasing and operating conditions are discussed. The dose rate sensitivity of the 4K RAMs is also presented along with single event upset (SEU) test data.
  • Keywords
    CMOS process; Circuits; Degradation; Fabrication; Laboratories; Microprocessors; Radiation hardening; Random access memory; Resistors; Single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333506
  • Filename
    4333506
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875423