Title :
Transient Radiation Upset Simulations of CMOS Memory Circuits
Author :
Massengill, Lloyd W. ; Diehl-Nagle, Sherra E.
Author_Institution :
Department of Electrical and Computer Engineering North Carolina State University Raleigh, NC 27695-7911
Abstract :
A computer simulation technique has identified and modeled a dominant mechanism for transient ionizing radiation induced logic upset in certain CMOS integrated circuits. This mechanism, termed ´rail span collapse´ here, has accounted for the discrepancy between simulated upsets of these circuits using only local radiation induced photocurrents and the experimentally observed upset dose-rate levels.
Keywords :
CMOS integrated circuits; CMOS logic circuits; CMOS memory circuits; Circuit simulation; Computational modeling; Computer simulation; Integrated circuit modeling; Ionizing radiation; Rails; Semiconductor device modeling;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333507
