Title :
Operating characteristics of high continuous power (50 W) two-dimensional surface-emitting lase array
Author :
Nam, D.W. ; Waarts, R.G. ; Welch, D.F. ; Major, J.S., Jr. ; Scifres, D.R.
Author_Institution :
Spectra Diode Labs. Inc., San Jose, CA, USA
fDate :
3/1/1993 12:00:00 AM
Abstract :
Monolithic two-dimensional surface-emitting laser (SEL) arrays suitable for both optoelectronic and high power applications were fabricated utilizing a 4- mu m*450- mu m InGaAs single mode real refractive index guided gain cavity with 90 degrees and 45 degrees ion milled facets. A total CW output power exceeding 50 W was achieved at lambda approximately=944 nm from a monolithic 16*94 2-D SEL array. The 50-W CW output power level is approximately ten times greater than previously demonstrated from a 2-D monolithic SEL array. Greater than 150 h of continuous operation of a 2-D SEL array at 25 W CW was demonstrated.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; refractive index; semiconductor laser arrays; 150 hrs; 25 W; 2D laser diode array; 4 micron; 450 micron; 50 W; 944 nm; IR; InGaAs; continuous operation; guided gain cavity; high continuous power; high power applications; integrated optoelectronics; ion milled facets; monolithic arrays; real refractive index; semiconductors; single mode; surface-emitting lase array; total CW output power; Etching; Indium gallium arsenide; Laser modes; Optical arrays; Optical refraction; Optical variables control; Power generation; Power lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
