Title :
Prompt and Total Dose Response of Hard 4k and 16k CMOS Static Random Access Memories (SRAMs)
Author :
Witteles, A.A. ; Volmerange, H. ; Davidson, H. ; Yue, H. ; Jennings, R. ; Brucker, G.J.
Author_Institution :
TRW Inc. One Space Park, Redondo Beach, California 90278
Keywords :
CMOS memory circuits; CMOS process; Pulse width modulation inverters; Radiation hardening; Random access memory; Resistors; Rivers; SRAM chips; Single event upset; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333510