2.0 W CW, diffraction-limited operation of a monolithically integrated master oscillator power amplifier

Author

Parke, Ross ; Welch, David F. ; Hardy, Amos ; Lang, Robert ; Mehuys, David ; O´Brien, Steve ; Dzurko, Ken ; Scifres, Don

Author_Institution

Spectra Diode Lab., San Jose, CA, USA

Volume

5

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

297

Lastpage

300

Abstract

The authors fabricated a monolithically integrated master oscillator power amplifier, M-MOPA, with a flared power amplifier region which radiates in a single diffraction limited lobe to an output power in excess of 2 W CW. The radiation pattern is stable with increasing drive current. The spectral output of the M-MOPA is a single longitudinal mode with a side-mode suppression ratio greater than 25 dB.<>

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optics; semiconductor lasers; 2 W; CW lasing; DBR laser; InGaAs active region; diffraction-limited operation; drive current; flared power amplifier region; laser modes; master oscillator power amplifier; monolithically integrated; output power; radiation pattern; semiconductors; side-mode suppression ratio; single diffraction limited lobe; single longitudinal mode; spectral output; Diffraction; High power amplifiers; Operational amplifiers; Optical arrays; Oscillators; Power amplifiers; Power generation; Power lasers; Pulse amplifiers; Semiconductor optical amplifiers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.205617

Filename

205617