Polarization-independent field-induced absorption-coefficient variation spectrum in an InGaAs/InP tensile-strained quantum well

Author

Ravikumar, K.G. ; Aizawa, T. ; Yamauchi, R.

Author_Institution

Adv. Tech. R&D Center, Chiba, Japan

Volume

5

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

310

Lastpage

312

Abstract

The authors report the absorption-coefficient variation of a tensile-strained InGaAs/InP quantum well measured throughout the spectral range near and away from the bandgap. They discuss the spectral absorption-coefficient variation spectra of an unstrained, a 0.15%, a 0.30%, and a 0.45% tensile-strained quantum well and show that the difference between the wavelengths of absorption-coefficient variation peaks for TE and TM modes becomes zero with 0.3% tensile strain. It is shown that this wavelength difference varies linearly with the magnitude of the strain.<>

Keywords

III-V semiconductors; electro-optical effects; gallium arsenide; indium compounds; optical constants; semiconductor quantum wells; InGaAs-InP; SQW; TM modes; TW modes; bandgap; electric-field induced absorption spectra; field-induced absorption-coefficient variation spectrum; polarization independence; semiconductors; spectral absorption-coefficient variation spectra; spectral range; tensile-strained quantum well; unstrained quantum well; Absorption; Bandwidth; Indium gallium arsenide; Indium phosphide; Optical modulation; Optical waveguides; Photonic band gap; Polarization; Slabs; Tellurium;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.205621

Filename

205621