DocumentCode
875550
Title
Computer simulation of a gold-doped diode
Author
Caughey, D.M.
Volume
3
Issue
12
fYear
1967
fDate
12/1/1967 12:00:00 AM
Firstpage
548
Lastpage
549
Abstract
Distributions of trapped charge, net recombination rate and space charge are shown for a diffused p-n junction in gold-doped silicon. The distributions are obtained by numerically solving the one-dimensional equations descriptive of semiconductor physical electronic behaviour. The gold in silicon is represented by 2-level 3-state traps.
Keywords
calculating apparatus; computer applications; gold; semiconductor diodes; semiconductor junctions;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19670429
Filename
4209037
Link To Document