• DocumentCode
    875561
  • Title

    Improved Transient Response Modeling in ICs

  • Author

    Florian, Joseph R. ; Jacobs, Robert W. ; Micheletti, Paul E. ; King, Everett E.

  • Author_Institution
    Science Applications International Corporation La Jolla, CA 92038
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1402
  • Lastpage
    1405
  • Abstract
    The transient response modeling commonly seen in the literature of silicon devices exposed to bursts of ionizing radiation is not capable of handling many current hardness assurance issues in integrated circuits. A new model is presented and compared with the standard model. Results of validation experiments using IC test transistors and an op amp IC are provided and are shown to agree with the new model.
  • Keywords
    Boundary conditions; Dielectric substrates; Doping; Equations; Integrated circuit modeling; Ionizing radiation; Photoconductivity; Semiconductor device modeling; Semiconductor process modeling; Transient response;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333519
  • Filename
    4333519
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875561