Title :
11 GHz bandwidth optical integrated receivers using GaAs MESFET and MSM technology
Author :
Wang, J.-S. ; Shih, C.-G. ; Chang, W.H. ; Middleton, J.R. ; Apostolakis, P.J. ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
3/1/1993 12:00:00 AM
Abstract :
State-of-the-art performance of GaAs-FET-based monolithic optoelectronic integrated circuit (OEIC) receivers is reported. The OEIC receiver achieves -3-dB bandwidth as high as 11 GHz for optical signals at a wavelength of 850 nm. The feedback resistance of the receiver is 1000 Omega and the effective transimpedance into a 50 Omega load is 565 Omega . The effective transimpedance-bandwidth (TZBW) product is 6.1 THz- Omega . This ultra-high-performance receiver was implemented via a high-yield, low-cost direct ion implanted GaAs MESFET technology with a 0.6- mu m gate length and a metal-semiconductor-metal (MSM) detector with 2- mu m lines*3- mu m spacings.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; 0.6 micron; 1000 ohm; 11 GHz; 850 nm; FET-based OEIC receivers; GaAs; IR; MESFET technology; MSM detectors; MSM technology; effective transimpedance-bandwidth; feedback resistance; gate length; high-yield; ion implanted; low-cost; metal-semiconductor-metal; monolithic optoelectronic integrated circuit; semiconductors; ultra-high-performance receiver; Bandwidth; Detectors; Gallium arsenide; Integrated optics; MESFETs; Monolithic integrated circuits; Optical feedback; Optical receivers; Optoelectronic devices; Particle beam optics;
Journal_Title :
Photonics Technology Letters, IEEE
