Title :
An integrated photodetector-amplifier using a-Si p-i-n photodiodes and poly-Si thin-film transistors
Author :
Yamauchi, Noriyoshi ; Inaba, Yasushi ; Okamura, Masamichi
Author_Institution :
NTT Interdisciplinary Res. Lab., Tokyo, Japan
fDate :
3/1/1993 12:00:00 AM
Abstract :
The authors propose a photodetector-amplifier circuit consisting of a bridge photodetector circuit and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. A test circuit was fabricated using a-Si p-i-n photodiodes and poly-Si thin-film transistors on a quartz substrate. A clear effect of the differential amplifier was demonstrated in the test circuit. It is shown that the circuit performance can be controlled by changing the bias current of the differential amplifier. With a relatively low bias current on the order of 10/sup -11/ A, the circuit works digitally with output voltages either close to 0 V or V/sub DD/. The power consumption of the circuit is approximately 60 mu W, which is low enough for use in two-dimensional arrays.<>
Keywords :
CMOS integrated circuits; amorphous semiconductors; elemental semiconductors; integrated optoelectronics; p-i-n photodiodes; photodetectors; silicon; thin film transistors; 2D arrays; 60 muW; CMOS differential amplifier; Si; SiO/sub 2/; a-Si p-i-n photodiodes; bias current; bridge photodetector circuit; circuit performance; digital circuit; integrated photodetector-amplifier; monolithically integrated; output voltages; poly-Si thin-film transistors; power consumption; quartz substrate; semiconductors; test circuit; transparent substrate; two-dimensional arrays; Bridge circuits; Circuit optimization; Circuit testing; Differential amplifiers; Energy consumption; PIN photodiodes; Photodetectors; Substrates; Thin film transistors; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
