Title :
Physical Mechanisms Contributing to Device "Rebound"
Author :
Schwank, J.R. ; Winokur, P.S. ; McWhorter, P.J. ; Sexton, F.W. ; Dressendorfer, P.V. ; Turpin, D.C.
Author_Institution :
Sandia National Laboratories Division 2144 Albuquerque, New Mexico 87185
Abstract :
The physical mechanisms that produce rebound have been identified. The positive increase in threshold voltage during a bias anneal is due to annealing of oxide trapped charge. Rebound can be predicted by measuring the contribution to the threshold voltage from radiation-induced interface states immediately after irradiation.
Keywords :
Annealing; Interface states; Ionizing radiation; Laboratories; Least squares approximation; MOS devices; Photonic band gap; Silicon; System testing; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333525
