• DocumentCode
    875816
  • Title

    Excimer laser junction of crystalline silicon solar cells

  • Author

    Micheels, Ronald H. ; Valdivia, Percy E.

  • Author_Institution
    Mobil Solar Energy Corp., Billerica, MA, USA
  • Volume
    37
  • Issue
    2
  • fYear
    1990
  • fDate
    2/1/1990 12:00:00 AM
  • Firstpage
    353
  • Lastpage
    354
  • Abstract
    An excimer laser cut trench is an effective means of providing junction isolation between the n+ diffused region and the aluminium back contact of a crystalline silicon solar cell. This method was developed for processing of edge-defined film-fed growth (EFG) silicon ribbon solar cells and has several features that make it attractive for low-cost solar cell processing. It is a single-step, noncontacting, dry process which is conducted in air. Only 100 laser pulses are required for isolation along a 10-cm line of focus, which permits a high throughput for this process. This technique should also be applicable to other types of crystalline solar cell where cell junctions are formed by a thermal diffusion process
  • Keywords
    elemental semiconductors; laser beam applications; semiconductor technology; silicon; solar cells; 10 cm; Al-Si; crystalline solar cell; excimer laser cut trench; high throughput; junction isolation; low-cost solar cell processing; thermal diffusion process; Chemical lasers; Costs; Crystallization; Electrons; Laser ablation; Laser beam cutting; Manufacturing industries; Optical control; Photovoltaic cells; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.46365
  • Filename
    46365