DocumentCode :
875816
Title :
Excimer laser junction of crystalline silicon solar cells
Author :
Micheels, Ronald H. ; Valdivia, Percy E.
Author_Institution :
Mobil Solar Energy Corp., Billerica, MA, USA
Volume :
37
Issue :
2
fYear :
1990
fDate :
2/1/1990 12:00:00 AM
Firstpage :
353
Lastpage :
354
Abstract :
An excimer laser cut trench is an effective means of providing junction isolation between the n+ diffused region and the aluminium back contact of a crystalline silicon solar cell. This method was developed for processing of edge-defined film-fed growth (EFG) silicon ribbon solar cells and has several features that make it attractive for low-cost solar cell processing. It is a single-step, noncontacting, dry process which is conducted in air. Only 100 laser pulses are required for isolation along a 10-cm line of focus, which permits a high throughput for this process. This technique should also be applicable to other types of crystalline solar cell where cell junctions are formed by a thermal diffusion process
Keywords :
elemental semiconductors; laser beam applications; semiconductor technology; silicon; solar cells; 10 cm; Al-Si; crystalline solar cell; excimer laser cut trench; high throughput; junction isolation; low-cost solar cell processing; thermal diffusion process; Chemical lasers; Costs; Crystallization; Electrons; Laser ablation; Laser beam cutting; Manufacturing industries; Optical control; Photovoltaic cells; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.46365
Filename :
46365
Link To Document :
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