7.5-14-GHz CE HBT MMIC linear power amplifier

Author

Wang, Nan-Lei ; Ho, Wu-Jing ; Sailer, A.L. ; Higgins, J.A.

Author_Institution

Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA

Volume

3

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

64

Lastpage

66

Abstract

A common-emitter (CE) AlGaAs-GaAs HBT MMIC amplifier was made to operate in X-band. 1-W CW output power was achieved in saturated power operation from 7.5 to 12 GHz. In class A linear power operation, it provides 26-dBm CW power. The amplifier shows low two-tone intermodulation distortion: better than -20 dBc IM/sub 3/ at 1-dB compression point throughout the 7.5-14-GHz bandwidth. The low third-order intermodulation distortion is a direct result of the excellent linear power performance of the CE AlGaAs-GaAs HBT. The combination of good efficiency, low third-order intermodulation distortion, and broad bandwidth in this MMIC amplifier clearly demonstrates the potential of the CE HBT in communication transmitter applications.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; power amplifiers; wideband amplifiers; 1 W; 6.5 GHz; 7.5 to 14 GHz; AlGaAs-GaAs; CW output power; HBT; MMIC; SHF; X-band; broad bandwidth; class A; common-emitter; communication transmitter applications; intermodulation distortion; linear power amplifier; low third-order IMD; saturated power operation; two-tone IMD; Bandwidth; Circuit testing; Frequency; Heterojunction bipolar transistors; Intermodulation distortion; MMICs; Operational amplifiers; Power amplifiers; Power generation; Transmitters;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.205666

Filename

205666