• DocumentCode
    875859
  • Title

    Cosmic Ray Induced Permanent Damage in MNOS EAROMs

  • Author

    Blandford, J.T., Jr. ; Waskiewicz, A.E. ; Pickel, J.C.

  • Author_Institution
    Rockwell International Anaheim, CA 92803
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1568
  • Lastpage
    1570
  • Abstract
    Permanent damage to the memory cells in Metal Nitride Oxide Semiconductor (MNOS) Electrically Alterable Read Only Memories (EAROM) has been observed after exposure to a heavy ion beam from a cyclotron under high field (Erase/Write Mode) conditions. The probability of permanent damage depends on the system application.
  • Keywords
    Aerospace testing; Annealing; Counting circuits; Cyclotrons; Displays; EPROM; Ion beams; Read-write memory; Scanning electron microscopy; Temperature;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333551
  • Filename
    4333551
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875859