Title :
Cosmic Ray Induced Permanent Damage in MNOS EAROMs
Author :
Blandford, J.T., Jr. ; Waskiewicz, A.E. ; Pickel, J.C.
Author_Institution :
Rockwell International Anaheim, CA 92803
Abstract :
Permanent damage to the memory cells in Metal Nitride Oxide Semiconductor (MNOS) Electrically Alterable Read Only Memories (EAROM) has been observed after exposure to a heavy ion beam from a cyclotron under high field (Erase/Write Mode) conditions. The probability of permanent damage depends on the system application.
Keywords :
Aerospace testing; Annealing; Counting circuits; Cyclotrons; Displays; EPROM; Ion beams; Read-write memory; Scanning electron microscopy; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333551
