Title :
Silicon ´punch-through´ diode
Author :
Kuchis, E.B. ; Wright, G.T.
Author_Institution :
University of Birmingham, Electronic & Electrical Engineering Department, Birmingham, UK
Abstract :
The large-signal a.c. characteristics of trap-controlled space-charge-limited current in silicon are described. At high frequencies, trapping is stationary and current occurs only when the applied signal voltage exceeds a threshold. Characteristics may be symmetrical or rectifying. Device capacitance is small and constant. Extremely sharp ´turn-on´ and `turn-off´ of current is predicted with response times of the order of 5 ps. Device construction is simple and applications in microwave systems are envisaged.
Keywords :
microwave devices; semiconductor diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680028
