Title :
Bipolar dynamic memory cell
fDate :
10/1/1971 12:00:00 AM
Abstract :
A bipolar dynamic memory cell for use in a high-speed random- access memory consists of a cross-coupled pair of transistors and two diodes. Information is dynamically stored using a bistable charge distribution and must be refreshed at a frequency of 1 kHz by a SELECT operation. Standby power per memory cell is in the nanowatt range. The cell requires only 3 interconnect lines and can be fabricated with standard bipolar technology on 12-mil/SUP 2/ silicon area. Cycle time is limited by the speed of decoding, driving, and sensing circuits and is estimated to be 50 ns for a 512-bit RAM chip with complete on-chip decoding.
Keywords :
Bipolar transistors; Random-access storage; Semiconductor storage devices; bipolar transistors; random-access storage; semiconductor storage devices; Capacitance; Costs; Decoding; Diodes; Fabrication; Frequency; Integrated circuit interconnections; Random access memory; Resistors; Silicon;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1971.1050190
