DocumentCode :
875926
Title :
Swept away [quantum-well infrared photodetectors]
Author :
Liu, H.C. ; Dudek, R. ; Oogarah, T. ; Grant, P.D. ; Wasilewski, Z.R. ; Schneider, H. ; Steinkogler, S. ; Walther, M. ; Koidl, P.
Author_Institution :
Nat. Res. Council Inst. for Microstructural Sci., Ottawa, Ont., Canada
Volume :
19
Issue :
6
fYear :
2003
Firstpage :
9
Lastpage :
16
Abstract :
The ultra high-speed capability of quantum-well infrared photodetectors (QWIPs) is well known, thanks to their intrinsic short carrier lifetime (∼5 ps). This obviously makes QWIPs well suited for high-speed and high-frequency applications. In the past, for thermal infrared imaging where devices are optimized to have the highest possible detectivity, the absorption quantum efficiency has been low (<10%). For high-speed applications where lasers are usually used, the most important parameter is the absorption efficiency. We show that high absorption (∼100%) can be easily achieved by simply changing some of the device parameters. We also review the experimental demonstrations of the high-speed capability. At present, QWIPs hold the unique position of having high-speed/-frequency capability and high absorption for the thermal infrared region. There are no competitive alternatives.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; photodetectors; quantum well lasers; AlGaAs; absorption quantum efficiency; carrier lifetime; device parameters; high-frequency application; high-speed application; quantum-well infrared photodetectors; thermal infrared imaging; Charge carrier lifetime; Conducting materials; Dark current; Electromagnetic wave absorption; Gallium arsenide; Infrared imaging; Laser applications; Quantum well lasers; Temperature sensors; Testing;
fLanguage :
English
Journal_Title :
Circuits and Devices Magazine, IEEE
Publisher :
ieee
ISSN :
8755-3996
Type :
jour
DOI :
10.1109/MCD.2003.1263454
Filename :
1263454
Link To Document :
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