DocumentCode :
876098
Title :
Surface state density variations on MOS structures due to gamma radiation
Author :
Mattauch, R.J.
Volume :
53
Issue :
11
fYear :
1965
Firstpage :
1748
Lastpage :
1748
Keywords :
Capacitance; Conductivity; Equations; Frequency dependence; Frequency response; Gamma rays; Laboratories; Silicon; Surface impedance; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.4365
Filename :
1446295
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=876098
