• DocumentCode
    876170
  • Title

    M.O.S. analogue memory element

  • Author

    Ryan, W.D. ; Reid, Alastair

  • Author_Institution
    Queen´s University of Belfast, Department of Electrical Engineering, Belfast, UK
  • Volume
    4
  • Issue
    4
  • fYear
    1968
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    A method is proposed which may permit extensive adaptive structures to be fabricated from large-scale integrated circuits. The method involves using the gate charge of an m.o.s.t. as an analogue memory element and changing its magnitude by ionisation. Some initial experimental results for a single device are quoted.
  • Keywords
    adaptive systems; analogue computers; integrated circuits; storage devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680058
  • Filename
    4210005
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=876170