Title :
A low-noise amplifier with parallel integrated-circuit transistors
Author :
Walton, C.A. ; Liu, C.C.
Abstract :
Low-noise transistor performance is achieved by paralleling a number of general-purpose integrated transistors. The primary effect of paralleling is to reduce the equivalent base resistance. A noise figure of 2.5 dB with a 50-/spl Omega/ source impedance is measured.
Keywords :
Amplifiers; Integrated circuits; Noise; amplifiers; integrated circuits; noise; Belts; Circuit stability; Equations; Gain; Low-noise amplifiers; Microwave amplifiers; Microwave transistors; Power amplifiers; Reflection; Scattering parameters;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1971.1050217
