Title :
V-shaped test patterns for measuring lateral diffusion
fDate :
12/1/1971 12:00:00 AM
Abstract :
Two new integrated circuit test patterns using V-shaped resistors are presented for measuring lateral diffusion underneath an oxide mask. The patterns require only nondestructive optical and d.c. electrical measurements, and can be fabricated in less than 50 mils/SUP 2/ of silicon. Experimental results show the measurement precision to be ±2×10/SUP -5/ cm.
Keywords :
Diffusion; Integrated circuit testing; diffusion; integrated circuit testing; Capacitance measurement; Electric variables measurement; Electrons; Integrated circuit measurements; Lighting; Quantum capacitance; Semiconductor diodes; Silicon; Testing; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1971.1050219
