DocumentCode
876219
Title
V-shaped test patterns for measuring lateral diffusion
Author
Mar, Jeich
Volume
6
Issue
6
fYear
1971
fDate
12/1/1971 12:00:00 AM
Firstpage
419
Lastpage
421
Abstract
Two new integrated circuit test patterns using V-shaped resistors are presented for measuring lateral diffusion underneath an oxide mask. The patterns require only nondestructive optical and d.c. electrical measurements, and can be fabricated in less than 50 mils/SUP 2/ of silicon. Experimental results show the measurement precision to be ±2×10/SUP -5/ cm.
Keywords
Diffusion; Integrated circuit testing; diffusion; integrated circuit testing; Capacitance measurement; Electric variables measurement; Electrons; Integrated circuit measurements; Lighting; Quantum capacitance; Semiconductor diodes; Silicon; Testing; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1971.1050219
Filename
1050219
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