Title :
Simple theory for improving the efficiency of Gunn oscillators
Author :
Ladbrooke, P.H. ; Carroll, J.E.
Author_Institution :
University of Cambridge, Engineering Laboratory, Cambridge, UK
Abstract :
The letter considers improvements in efficiency to be expected from varying the area or donor-density profile of a Gunn device. A method is given to design a diode theoretically capable of efficiencies approaching 40% for the best-quality GaAs with a peak/valley ratio approaching 3.
Keywords :
Gunn effect; oscillators; semiconductor diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680067
