DocumentCode

876282

Title

n-inversion layers on oxidized p-type silicon

Author

Leuenberger, F.

Volume

53

Issue

11

fYear

1965

Firstpage

1761

Lastpage

1761

Keywords

Capacitance; Conductivity; Electrodes; Extraterrestrial phenomena; Impurities; Oxidation; Silicon compounds; Space charge; Temperature; Voltage;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1965.4380

Filename

1446310