Model of tip-sample interaction and image reconstruction

Author

Du, Sidan ; Cai, Lian ; Li, Yang ; Gao, Duntang

Author_Institution

Dept. of Electron. Sci. & Eng., Nanjing Univ., China

Volume

55

Issue

2

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

507

Lastpage

513

Abstract

By setting up a tip-sample interaction model, the relationship between electric force and tip-sample spacing for scanning probe microscopy (SPM) is analyzed in this paper. The theoretical calculations are in agreement with the experimental data. Tip geometry plays an important role in SPM-image quality. In this paper, how the tip geometry affects the sample image is investigated, and two examples are studied to demonstrate it. Blind reconstruction, which is a technology to characterize the tip geometry with SPM image only, is also introduced. Their results are valuable and important for measurements on the scale of nanometer.

Keywords

image reconstruction; scanning tunnelling microscopy; SPM-image quality; blind reconstruction; electric force; image reconstruction; nanometer scale measurement; scanning probe microscopy; scanning tunneling microscope; tip geometry; tip-sample interaction model; Clouds; Electrons; Electrostatics; Geometry; Image analysis; Image reconstruction; Scanning probe microscopy; Surface reconstruction; Tunneling; Voltage; Blind reconstruction; electric force; in situ scanning tunneling microscope (STM); scanning probe microscopy (SPM); tip geometry;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/TIM.2006.870314

Filename

1608595