An application of device modeling to microwave power transistors

Author

Lange, Julius ; Carr, William N.

Volume

7

Issue

1

fYear

1972

Firstpage

71

Lastpage

80

Abstract

A new approach for modelling bipolar transistors in the microwave region under class-C conditions is presented. The following features were combined in the modelling procedure: 1) modelling at microwave frequencies, 2) modelling under large-signal class-C conditions, 3) modelling under mismatched conditions, and 4) correlation between measurements and modelling results. A model has been economically implemented and sufficient accuracy was obtained for: 1) device modelling over a range of operating conditions for which direct experimental characterization is not economically obtainable, 2) optimizing decisions for improved device fabrication, and 3) computer optimization of matching networks for microwave transistors.

Keywords

Bipolar transistors; Microwave devices; Optimisation; Semiconductor device models; bipolar transistors; microwave devices; optimisation; semiconductor device models; Bipolar transistors; Computer networks; Fabrication; Frequency measurement; Microwave devices; Microwave frequencies; Microwave measurements; Microwave transistors; Power generation economics; Power transistors;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1972.1050243

Filename

1050243