DocumentCode
876614
Title
A fully planar p-n-p heterojunction bipolar transistor
Author
Sunderland, David A. ; Haden, James M. ; Dzurko, K.M. ; Stanchina, William E. ; Lee, Hsing-Chung ; Danner, Allen D. ; Dapkus, P.Daniel
Author_Institution
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Volume
9
Issue
3
fYear
1988
fDate
3/1/1988 12:00:00 AM
Firstpage
116
Lastpage
118
Abstract
The fabrication of fully planar p-i-n heterojunction bipolar transistors is reported. The devices were constructed using ion implantation into AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor deposition (MOCVD). Incremental current gains of 100 have been observed for transistors with 22 mu m*4 mu m emitters, No emitter size effects was observed.<>
Keywords
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; ion implantation; 22 micron; 4 micron; AlGaAs-GaAs; fully planar; incremental current gains; ion implantation; metalorganic chemical vapor; p-i-n heterojunction; p-n-p heterojunction bipolar transistor; Epitaxial layers; Fabrication; Furnaces; Gallium arsenide; Heterojunction bipolar transistors; Implants; Parameter estimation; Rapid thermal annealing; Resists; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.2060
Filename
2060
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