Title :
A fully planar p-n-p heterojunction bipolar transistor
Author :
Sunderland, David A. ; Haden, James M. ; Dzurko, K.M. ; Stanchina, William E. ; Lee, Hsing-Chung ; Danner, Allen D. ; Dapkus, P.Daniel
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fDate :
3/1/1988 12:00:00 AM
Abstract :
The fabrication of fully planar p-i-n heterojunction bipolar transistors is reported. The devices were constructed using ion implantation into AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor deposition (MOCVD). Incremental current gains of 100 have been observed for transistors with 22 mu m*4 mu m emitters, No emitter size effects was observed.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; ion implantation; 22 micron; 4 micron; AlGaAs-GaAs; fully planar; incremental current gains; ion implantation; metalorganic chemical vapor; p-i-n heterojunction; p-n-p heterojunction bipolar transistor; Epitaxial layers; Fabrication; Furnaces; Gallium arsenide; Heterojunction bipolar transistors; Implants; Parameter estimation; Rapid thermal annealing; Resists; Substrates;
Journal_Title :
Electron Device Letters, IEEE
