Title :
Applications of resonant-tunneling field-effect transistors
Author :
Woodward, T.K. ; McGill, T.C. ; Chung, H.F. ; Burnham, R.D.
Author_Institution :
Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
fDate :
3/1/1988 12:00:00 AM
Abstract :
Flip-flop and frequency-doubling operations are demonstrated, using a simple circuit that combines a resistor with a three-terminal negative-resistance device. The device is a series integration of resonant-tunneling heterostructure with a field-effect transistors. Results, obtained at 77 K, are presented for two samples that were grown by metalorganic chemical vapor deposition.<>
Keywords :
field effect transistors; flip-flops; negative resistance; tunnelling; 77 K; flip-flop; frequency-doubling operations; metalorganic chemical vapor deposition; resonant-tunneling field-effect transistors; resonant-tunneling heterostructure; series integration; three-terminal negative-resistance device; Circuits; FETs; Fabrication; Flip-flops; Frequency; MESFETs; Resistors; Resonance; Resonant tunneling devices; Voltage;
Journal_Title :
Electron Device Letters, IEEE
