• DocumentCode
    876679
  • Title

    Ion-implanted complementary MOS transistors in low-voltage circuits

  • Author

    Swanson, Richard M. ; Meindl, James D.

  • Volume
    7
  • Issue
    2
  • fYear
    1972
  • fDate
    4/1/1972 12:00:00 AM
  • Firstpage
    146
  • Lastpage
    153
  • Abstract
    Simple but reasonably accurate equations are derived which describe MOS transistor operation in the weak inversion region near turn-on. These equations are used to find the transfer characteristics of complementary MOS inverters. The smallest supply voltage at which these circuits will function is approximately 8kT/q. A boron ion implantation is used for adjusting MOST turn-on voltage for low-voltage circuits.
  • Keywords
    Field effect transistors; Ion implantation; field effect transistors; ion implantation; Boron; Dielectric substrates; Digital circuits; Electrons; Inverters; Ion implantation; Low voltage; MOSFETs; Poisson equations; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1972.1050260
  • Filename
    1050260
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=876679