DocumentCode :
876696
Title :
Large-value monolithic resistors for micropower integrated circuits
Author :
Hudson, Pete H. ; Kespegis, J.S. ; Meindl, James D.
Volume :
7
Issue :
2
fYear :
1972
fDate :
4/1/1972 12:00:00 AM
Firstpage :
160
Lastpage :
167
Abstract :
The minimum power dissipation of micropower integrated circuits is often limited by the availability of large-value monolithic resistors. Two major types of field-effect resistor structures are examined and an analysis of the primary factors that determine sheet resistance and parasitic capacitance is presented. Resistor tolerance, linearity, and temperature coefficient are briefly discussed. It is shown that resistors with sheet resistances greater than 50 kΩ/□ and parasitic capacitances less than 0.002 pF/kΩ can be readily fabricated in a monolithic structure.
Keywords :
Field effect devices; Monolithic integrated circuits; Thin film resistors; field effect devices; monolithic integrated circuits; thin film resistors; Dielectric substrates; Hybrid integrated circuits; Impurities; Laboratories; Linearity; Monolithic integrated circuits; Parasitic capacitance; Power dissipation; Resistors; Temperature;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1972.1050262
Filename :
1050262
Link To Document :
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