• DocumentCode
    876696
  • Title

    Large-value monolithic resistors for micropower integrated circuits

  • Author

    Hudson, Pete H. ; Kespegis, J.S. ; Meindl, James D.

  • Volume
    7
  • Issue
    2
  • fYear
    1972
  • fDate
    4/1/1972 12:00:00 AM
  • Firstpage
    160
  • Lastpage
    167
  • Abstract
    The minimum power dissipation of micropower integrated circuits is often limited by the availability of large-value monolithic resistors. Two major types of field-effect resistor structures are examined and an analysis of the primary factors that determine sheet resistance and parasitic capacitance is presented. Resistor tolerance, linearity, and temperature coefficient are briefly discussed. It is shown that resistors with sheet resistances greater than 50 kΩ/□ and parasitic capacitances less than 0.002 pF/kΩ can be readily fabricated in a monolithic structure.
  • Keywords
    Field effect devices; Monolithic integrated circuits; Thin film resistors; field effect devices; monolithic integrated circuits; thin film resistors; Dielectric substrates; Hybrid integrated circuits; Impurities; Laboratories; Linearity; Monolithic integrated circuits; Parasitic capacitance; Power dissipation; Resistors; Temperature;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1972.1050262
  • Filename
    1050262