DocumentCode
876696
Title
Large-value monolithic resistors for micropower integrated circuits
Author
Hudson, Pete H. ; Kespegis, J.S. ; Meindl, James D.
Volume
7
Issue
2
fYear
1972
fDate
4/1/1972 12:00:00 AM
Firstpage
160
Lastpage
167
Abstract
The minimum power dissipation of micropower integrated circuits is often limited by the availability of large-value monolithic resistors. Two major types of field-effect resistor structures are examined and an analysis of the primary factors that determine sheet resistance and parasitic capacitance is presented. Resistor tolerance, linearity, and temperature coefficient are briefly discussed. It is shown that resistors with sheet resistances greater than 50 kΩ/□ and parasitic capacitances less than 0.002 pF/kΩ can be readily fabricated in a monolithic structure.
Keywords
Field effect devices; Monolithic integrated circuits; Thin film resistors; field effect devices; monolithic integrated circuits; thin film resistors; Dielectric substrates; Hybrid integrated circuits; Impurities; Laboratories; Linearity; Monolithic integrated circuits; Parasitic capacitance; Power dissipation; Resistors; Temperature;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1972.1050262
Filename
1050262
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