Title :
Wideband HBT circuits for operation above 10 GHz and power supply voltages below 5 V
Author :
Banu, Mihai ; Jalali, Bahram ; Humphrey, D.A. ; Montgomery, R.K. ; Nottenburg, R.N. ; Hamm, R.A. ; Panish, M.B.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Single-stage and two-stage differential cascode amplifiers, and a 2:1 multiplexer, fabricated in InP/InGaAs HBT technology and powered from less than 5 V supplies, are presented. The amplifiers have typical DC gains of 21 and 33 dB, respectively, and unity-gain bandwidths in excess of 15 GHz, with approximately 20 dB gain at 10 GHz. The multiplexer was tested at rates up to 20 Gbit/s.
Keywords :
III-V semiconductors; bipolar integrated circuits; differential amplifiers; digital integrated circuits; gallium arsenide; indium compounds; linear integrated circuits; multiplexing equipment; wideband amplifiers; 15 GHz; 20 Gbit/s; 21 dB; 2:1 multiplexer; 33 dB; 5 V; DC gains; InP-InGaAs; differential cascode amplifiers; power supply voltages; single stage amplifier; two stage amplifier; unity-gain bandwidths; wideband HBT circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920221
