Title :
A new complementary monolithic transistor structure
Author :
Su, S.C. ; Meindl, James D.
fDate :
4/1/1972 12:00:00 AM
Abstract :
A novel complementary monolithic bipolar transistor structure has been developed. By adding one extra diffusion to the standard monolithic bipolar transistor process a pair of high current gain and very low saturation resistance n-p-n and p-n-p transistors can be fabricated on the same chip. High sheet resistances are also present in this structure.
Keywords :
Bipolar transistors; Monolithic integrated circuits; bipolar transistors; monolithic integrated circuits; Bipolar integrated circuits; Bipolar transistor circuits; Bipolar transistors; Circuit optimization; Epitaxial growth; Epitaxial layers; Frequency response; Monolithic integrated circuits; Resistors; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1972.1050264
