Improved Schottky clamped (T/sup 2/L) circuits

Al-Si Schottky clamped transistors used as fast switching signal devices or in integrated circuits are superior to gold-doped transistors for such parameters as low-level current gain, leakage current I/SUB CO/, and propagation delay t/SUB pd/. A digital application is used to show how some of these parameters can be optimized for a T/SUP 2/L circuit, providing high switching speed (t/SUB pd/ 4 to 5 ns) and a 40-percent better worst-case low-level noise margin than the usual gold-doped T/SUP 2/L circuit.